238000002425 crystallisation Methods 0.000 claims abstract description 24.Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Priority to DE19711922A priority Critical patent/DE19711922A1/en Priority to DE19711922.0 priority Application filed by 알.뢰머, 와커 실트로닉 게셀샤프트 퓌르, 게르트 켈러, 와커 실트로닉 게셀샤프트 퓌르 할브라이테르마테리아리엔 아게 filed Critical 알.뢰머 Publication of KR19980080133A publication Critical patent/KR19980080133A/en Application granted granted Critical Publication of KR100268712B1 publication Critical patent/KR100268712B1/en Links 41 To facilitate the crystal growth, the end of the container where a crystal starts to grow may be elongated, and a seed crystal can be placed at that end. Single crystal drawing method and apparatusĭownload PDF Info Publication number KR19980080133A KR19980080133A KR1019980008103A KR19980008103A KR19980080133A KR 19980080133 A KR19980080133 A KR 19980080133A KR 1019980008103 A KR1019980008103 A KR 1019980008103A KR 19980008103 A KR19980008103 A KR 19980008103A KR 19980080133 A KR19980080133 A KR 19980080133A Authority KR South Korea Prior art keywords single crystal component crystallization drawing method silicon single Prior art date Application number KR1019980008103A Other languages Korean ( ko) SingleCrystal lets you simulate X-ray, neutron and electron diffraction patterns from single crystals, display reciprocal lattice sections and construct stereographic projections of planes or vectors. Bridgman technique involves slow cooling of a molten material by moving its container from a hot zone into a cold one (Fig.
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